IDT70T651S12BCI
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中文资料第24397页
>> IDT70T651S12BCI(HIGH-SPEED2.5V256/128K×36异步双端口静态RAM采用3.3V0R2.5V接口)
IDT70T651S12BCI中文资料
电子元器件
中文功能描述
生产厂商
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文件大小
PDF文件
IDT70T651S12BCI
HIGH-SPEED2.5V256/128K×36异步双端口静态RAM采用3.3V0R2.5V接口
IDT
Integrated Device Technology
27 Pages
344.83 Kbytes
PDF文件
IDT70T651S12BF
HIGH-SPEED2.5V256/128K×36异步双端口静态RAM采用3.3V0R2.5V接口
IDT
Integrated Device Technology
27 Pages
344.83 Kbytes
PDF文件
IDT70T651S12BFI
HIGH-SPEED2.5V256/128K×36异步双端口静态RAM采用3.3V0R2.5V接口
IDT
Integrated Device Technology
27 Pages
344.83 Kbytes
PDF文件
IDT70T651S12DR
HIGH-SPEED2.5V256/128K×36异步双端口静态RAM采用3.3V0R2.5V接口
IDT
Integrated Device Technology
27 Pages
344.83 Kbytes
PDF文件
IDT70T651S12DRI
HIGH-SPEED2.5V256/128K×36异步双端口静态RAM采用3.3V0R2.5V接口
IDT
Integrated Device Technology
27 Pages
344.83 Kbytes
PDF文件
IDT70T651S15BC
HIGH-SPEED2.5V256/128K×36异步双端口静态RAM采用3.3V0R2.5V接口
IDT
Integrated Device Technology
27 Pages
344.83 Kbytes
PDF文件
IDT70T651S15BCI
HIGH-SPEED2.5V256/128K×36异步双端口静态RAM采用3.3V0R2.5V接口
IDT
Integrated Device Technology
27 Pages
344.83 Kbytes
IDT70T651S15BF
HIGH-SPEED2.5V256/128K×36异步双端口静态RAM采用3.3V0R2.5V接口
IDT
Integrated Device Technology
27 Pages
344.83 Kbytes
PDF文件
IDT70T651S15BFI
HIGH-SPEED2.5V256/128K×36异步双端口静态RAM采用3.3V0R2.5V接口
IDT
Integrated Device Technology
27 Pages
344.83 Kbytes
IDT70T651S15DR
HIGH-SPEED2.5V256/128K×36异步双端口静态RAM采用3.3V0R2.5V接口
IDT
Integrated Device Technology
27 Pages
344.83 Kbytes
PDF文件
IDT70T651S15DRI
HIGH-SPEED2.5V256/128K×36异步双端口静态RAM采用3.3V0R2.5V接口
IDT
Integrated Device Technology
27 Pages
344.83 Kbytes
IDT70T651S8BC
HIGH-SPEED2.5V256/128K×36异步双端口静态RAM采用3.3V0R2.5V接口
IDT
Integrated Device Technology
27 Pages
344.83 Kbytes
PDF文件
IDT70T651S8BCI
HIGH-SPEED2.5V256/128K×36异步双端口静态RAM采用3.3V0R2.5V接口
IDT
Integrated Device Technology
27 Pages
344.83 Kbytes
IDT70T651S8BF
HIGH-SPEED2.5V256/128K×36异步双端口静态RAM采用3.3V0R2.5V接口
IDT
Integrated Device Technology
27 Pages
344.83 Kbytes
PDF文件
IDT70T651S8BFI
HIGH-SPEED2.5V256/128K×36异步双端口静态RAM采用3.3V0R2.5V接口
IDT
Integrated Device Technology
27 Pages
344.83 Kbytes
IDT70T651S8DR
HIGH-SPEED2.5V256/128K×36异步双端口静态RAM采用3.3V0R2.5V接口
IDT
Integrated Device Technology
27 Pages
344.83 Kbytes
IDT70T651S8DRI
HIGH-SPEED2.5V256/128K×36异步双端口静态RAM采用3.3V0R2.5V接口
IDT
Integrated Device Technology
27 Pages
344.83 Kbytes
IDT70T653M
HIGH-SPEED2.5V256/128K×36异步双端口静态RAM采用3.3V0R2.5V接口
IDT
Integrated Device Technology
24 Pages
309.44 Kbytes
IDT70T653MS10BC
HIGH-SPEED2.5V256/128K×36异步双端口静态RAM采用3.3V0R2.5V接口
IDT
Integrated Device Technology
24 Pages
309.44 Kbytes
PDF文件
IDT70T653MS10BCI
HIGH-SPEED2.5V256/128K×36异步双端口静态RAM采用3.3V0R2.5V接口
IDT
Integrated Device Technology
24 Pages
309.44 Kbytes
IDT70T653MS12BC
HIGH-SPEED2.5V256/128K×36异步双端口静态RAM采用3.3V0R2.5V接口
IDT
Integrated Device Technology
24 Pages
309.44 Kbytes
PDF文件
IDT70T653MS12BCI
HIGH-SPEED2.5V256/128K×36异步双端口静态RAM采用3.3V0R2.5V接口
IDT
Integrated Device Technology
24 Pages
309.44 Kbytes
PDF文件
IDT70T653MS15BC
HIGH-SPEED2.5V256/128K×36异步双端口静态RAM采用3.3V0R2.5V接口
IDT
Integrated Device Technology
24 Pages
309.44 Kbytes
PDF文件
IDT70T653MS15BCI
HIGH-SPEED2.5V256/128K×36异步双端口静态RAM采用3.3V0R2.5V接口
IDT
Integrated Device Technology
24 Pages
309.44 Kbytes
IDT70T659S
HIGH-SPEED2.5V256/128K×36异步双端口静态RAM采用3.3V0R2.5V接口
IDT
Integrated Device Technology
27 Pages
344.83 Kbytes
IDT70T659S10BC
HIGH-SPEED2.5V256/128K×36异步双端口静态RAM采用3.3V0R2.5V接口
IDT
Integrated Device Technology
27 Pages
344.83 Kbytes
PDF文件
IDT70T659S10BCI
HIGH-SPEED2.5V256/128K×36异步双端口静态RAM采用3.3V0R2.5V接口
IDT
Integrated Device Technology
27 Pages
344.83 Kbytes
PDF文件
IDT70T659S10BF
HIGH-SPEED2.5V256/128K×36异步双端口静态RAM采用3.3V0R2.5V接口
IDT
Integrated Device Technology
27 Pages
344.83 Kbytes
PDF文件
IDT70T659S10BFI
HIGH-SPEED2.5V256/128K×36异步双端口静态RAM采用3.3V0R2.5V接口
IDT
Integrated Device Technology
27 Pages
344.83 Kbytes
PDF文件
IDT70T659S10DR
HIGH-SPEED2.5V256/128K×36异步双端口静态RAM采用3.3V0R2.5V接口
IDT
Integrated Device Technology
27 Pages
344.83 Kbytes
PDF文件
IDT70T659S10DRI
HIGH-SPEED2.5V256/128K×36异步双端口静态RAM采用3.3V0R2.5V接口
IDT
Integrated Device Technology
27 Pages
344.83 Kbytes
IDT70T659S12BC
HIGH-SPEED2.5V256/128K×36异步双端口静态RAM采用3.3V0R2.5V接口
IDT
Integrated Device Technology
27 Pages
344.83 Kbytes
PDF文件
IDT70T659S12BCI
HIGH-SPEED2.5V256/128K×36异步双端口静态RAM采用3.3V0R2.5V接口
IDT
Integrated Device Technology
27 Pages
344.83 Kbytes
PDF文件
IDT70T659S12BF
HIGH-SPEED2.5V256/128K×36异步双端口静态RAM采用3.3V0R2.5V接口
IDT
Integrated Device Technology
27 Pages
344.83 Kbytes
PDF文件
IDT70T659S12BFI
HIGH-SPEED2.5V256/128K×36异步双端口静态RAM采用3.3V0R2.5V接口
IDT
Integrated Device Technology
27 Pages
344.83 Kbytes
PDF文件
IDT70T659S12DR
HIGH-SPEED2.5V256/128K×36异步双端口静态RAM采用3.3V0R2.5V接口
IDT
Integrated Device Technology
27 Pages
344.83 Kbytes
PDF文件
IDT70T659S12DRI
HIGH-SPEED2.5V256/128K×36异步双端口静态RAM采用3.3V0R2.5V接口
IDT
Integrated Device Technology
27 Pages
344.83 Kbytes
PDF文件
IDT70T659S15BC
HIGH-SPEED2.5V256/128K×36异步双端口静态RAM采用3.3V0R2.5V接口
IDT
Integrated Device Technology
27 Pages
344.83 Kbytes
PDF文件
IDT70T659S15BCI
HIGH-SPEED2.5V256/128K×36异步双端口静态RAM采用3.3V0R2.5V接口
IDT
Integrated Device Technology
27 Pages
344.83 Kbytes
IDT70T659S15BF
HIGH-SPEED2.5V256/128K×36异步双端口静态RAM采用3.3V0R2.5V接口
IDT
Integrated Device Technology
27 Pages
344.83 Kbytes
PDF文件
IDT70T659S15BFI
HIGH-SPEED2.5V256/128K×36异步双端口静态RAM采用3.3V0R2.5V接口
IDT
Integrated Device Technology
27 Pages
344.83 Kbytes
IDT70T659S15DR
HIGH-SPEED2.5V256/128K×36异步双端口静态RAM采用3.3V0R2.5V接口
IDT
Integrated Device Technology
27 Pages
344.83 Kbytes
PDF文件
IDT70T659S15DRI
HIGH-SPEED2.5V256/128K×36异步双端口静态RAM采用3.3V0R2.5V接口
IDT
Integrated Device Technology
27 Pages
344.83 Kbytes
IDT70T659S8BC
HIGH-SPEED2.5V256/128K×36异步双端口静态RAM采用3.3V0R2.5V接口
IDT
Integrated Device Technology
27 Pages
344.83 Kbytes
PDF文件
IDT70T659S8BCI
HIGH-SPEED2.5V256/128K×36异步双端口静态RAM采用3.3V0R2.5V接口
IDT
Integrated Device Technology
27 Pages
344.83 Kbytes
IDT70T659S8BF
HIGH-SPEED2.5V256/128K×36异步双端口静态RAM采用3.3V0R2.5V接口
IDT
Integrated Device Technology
27 Pages
344.83 Kbytes
PDF文件
IDT70T659S8BFI
HIGH-SPEED2.5V256/128K×36异步双端口静态RAM采用3.3V0R2.5V接口
IDT
Integrated Device Technology
27 Pages
344.83 Kbytes
IDT70T659S8DR
HIGH-SPEED2.5V256/128K×36异步双端口静态RAM采用3.3V0R2.5V接口
IDT
Integrated Device Technology
27 Pages
344.83 Kbytes
IDT70T659S8DRI
HIGH-SPEED2.5V256/128K×36异步双端口静态RAM采用3.3V0R2.5V接口
IDT
Integrated Device Technology
27 Pages
344.83 Kbytes
IDT70T9159L
HIGH-SPEED2.5V256/128K×36异步双端口静态RAM采用3.3V0R2.5V接口
IDT
Integrated Device Technology
16 Pages
188.04 Kbytes
IDT70T651S12BCI参数资料
电子元器件
参数资料
IDT70T651S12BCI
功能描述:IC SRAM 9MBIT 12NS 256BGA;RoHS:否;类别:集成电路 (IC) >> 存储器;系列:-;标准包装:3,000;系列:-;格式 - 存储器:EEPROMs - 串行;存储器类型:EEPROM;存储容量:8K (1K x 8);速度:400kHz;接口:I²C,2 线串口;电源电压:1.7 V ~ 5.5 V;工作温度:-40°C ~ 85°C;封装/外壳:8-SOIC(0.154",3.90mm 宽);供应商设备封装:8-SOIC;包装:带卷 (TR);
IDT70T651S12BCI供应商
电子元器件
供应商
联系方式
品牌
封装
批号
数量
IDT70T651S12BCI
深圳市毅创辉电子科技有限公司
谭玉丽
19129491949(手机优先
IDT, Integrated Device Technology Inc
256-LBGA
12+
10001
IDT70T651S12BCI
深圳市兴合盛科技发展有限公司
销售部:马先生
0755-83350789
IDT, Integrated Device Technology Inc
256-LBGA
15+
180018
IDT70T651S12BCI8
深圳市毅创辉电子科技有限公司
谭玉丽
19129491949(手机优先
IDT, Integrated Device Technology Inc
256-LBGA
12+
10001
IDT70T651S12BCI8
深圳市兴合盛科技发展有限公司
销售部:马先生
0755-83350789
IDT, Integrated Device Technology Inc
256-LBGA
15+
180018
IDT70T651S12BCI
深圳市莱特斯电子科技有限公司
江先生
19176527791
IDT
标准封装
2014+
9600
IDT70T651S12BCI
深圳市一线半导体有限公司
谢S/曾S/钟S陈S/张S/刘S
0755-88608801
IDT, Integrated Device Technology Inc
256-LBGA
12+
65860
IDT70T651S12BCI
深圳市世联芯科技有限公司
蔡小姐
18824247340
IDT, Integrated Device Technology Inc
256-LBGA
12+
10001
IDT70T651S12BCI
深圳市深创辉科技有限公司
徐小姐
0755-83203120-822
IDT, Integrated Device Technology Inc
256-LBGA
13+
10001
IDT70T651S12BCI
深圳市灿顺兴科技有限公司
王先生 ★只 做 原 装★
18682213510(优秀供应商)
IDT
256-LBGA
13+
1950
IDT70T651S12BCI
深圳市洪芯洪科技有限公司
曹小姐
0755-22212047
IDT, Integrated Device Technology Inc
256-LBGA
13+
6500
相关元件资料:
IDT70T651S12BF
IDT70T651S12BFI
IDT70T651S12DR
IDT70T651S12DRI
IDT70T651S15BC
IDT70T651S15BCI
IDT70T651S15BF
IDT70T651S15BFI
IDT70T651S15DR
IDT70T651S15DRI
IDT70T651S8BC
IDT70T651S8BCI
IDT70T651S8BF
IDT70T651S8BFI
IDT70T651S8DR
IDT70T651S8DRI
IDT70T653M
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IDT70T653MS10BCI
IDT70T653MS12BC
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