ST代理6A/600V可控硅晶闸管BTA06-600C

BTA06 B/C
BTB06 B/C
March 1995
STANDARD TRIACS
Symbol Parameter Value Unit
IT(RMS) RMS on-state current
(360° conduction angle)
BTA Tc = 100 °C 6 A
BTB Tc = 105 °C
ITSM Non repetitive surge peak on-state current
( Tj initial = 25°C )
tp = 8.3 ms 63 A
tp = 10 ms 60
I2t I2t value tp = 10 ms 18 A2s
dI/dt Critical rate of rise of on-state current
Gate supply : IG = 500mA diG/dt = 1A/ms
Repetitive
F = 50 Hz
10 A/ms
Non
Repetitive
50
Tstg
Tj
Storage and operating junction temperature range - 40 to + 150
- 40 to + 125
°C
°C
Tl Maximum lead temperature for soldering during 10 s at 4.5 mm
from case
260 °C
..HIGH SURGE CURRENT CAPABILITY .COMMUTATION : (dV/dt)c > 5 V/ms BTA Family :
INSULATINGVOLTAGE= 2500V(RMS)
(UL RECOGNIZED : E81734)
DESCRIPTION
Symbol Parameter BTA / BTB06-... B/C Unit
400 600 700 800
VDRM
VRRM
Repetitive peak off-state voltage
Tj = 125 °C
400 600 700 800 V
ABSOLUTE RATINGS (limiting values)
FEATURES
The BTA/BTB06 B/C triac family are high performance
glass passivated PNPN devices.
These parts are suitables for general purpose applications
where high surge current capability is required.
Application such as phase control and
static switching on inductive or resistive load.
TO220AB
(Plastic)
A1
A2 G
1/5
GATE CHARACTERISTICS (maximum values)
Symbol Parameter Value Unit
Rth (j-a) Junction to ambient 60 °C/W
Rth (j-c) DC Junction to case for DC BTA 4.4 °C/W
BTB 3.2
Rth (j-c) AC Junction to case for 360° conduction angle
( F= 50 Hz)
BTA 3.3 °C/W
BTB 2.4
Symbol Test Conditions Quadrant Suffix Unit
B C
IGT VD=12V (DC) RL=33W Tj=25°C I-II-III MAX 50 25 mA
IV MAX 100 50
VGT VD=12V (DC) RL=33W Tj=25°C I-II-III-IV MAX 1.5 V
VGD VD=VDRM RL=3.3kW Tj=110°C I-II-III-IV MIN 0.2 V
tgt VD=VDRM IG = 500mA
dIG/dt = 3A/ms
Tj=25°C I-II-III-IV TYP 2 ms
IL IG=1.2 IGT Tj=25°C I-III-IV TYP 40 20 mA
II 70 35
IH* IT= 500mA gate open Tj=25°C MAX 50 25 mA
VTM * ITM= 8.5A tp= 380ms Tj=25°C MAX 1.65 V
IDRM
IRRM
VDRM Rated
VRRM Rated
Tj=25°C MAX 0.01 mA
Tj=110°C MAX 0.5
dV/dt * Linear slope up to VD=67%VDRM
gate open
Tj=110°C MIN 250 100 V/ms
(dV/dt)c * (dI/dt)c = 2.7A/ms Tj=110°C MIN 10 5 V/ms