PHILIPS飞利浦原装进口可控硅BT169

现货PHI原装进口可控硅BT169

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3. Ordering information
4. Limiting values
[1] Although not recommended, off-state voltages up to 800 V may be applied without damage, but the thyristor may switch to the on-state.
The rate of rise of current should not exceed 15 A/ms.
Table 2: Ordering information
Type number Package
Name Description Version
BT169B - plastic single-ended leaded (through hole) package; 3 leads SOT54
BT169D
BT169G
Table 3: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VDRM, VRRM repetitive peak off-state voltages
BT169B [1] - 200 V
BT169D [1] - 400 V
BT169G [1] - 600 V
IT(AV) average on-state current half sine wave;
Tlead ￡ 83 °C;
see Figure 1
- 0.5 A
IT(RMS) RMS on-state current all conduction angles;
see Figure 4 and 5
- 0.8 A
ITSM non-repetitive peak on-state current half sine wave;
Tj = 25 °C prior to
surge;
see Figure 2 and 3
t = 10 ms - 8 A
t = 8.3 ms - 9 A
I2t I2t for fusing t = 10 ms - 0.32 A2s
dIT/dt repetitive rate of rise of on-state
current after triggering
ITM = 2 A; IG = 10 mA;
dIG/dt = 100 mA/ms
- 50 A/ms
IGM peak gate current - 1 A
VGM peak gate voltage - 5 V
VRGM peak reverse gate voltage - 5 V
PGM peak gate power - 2 W
PG(AV) average gate power over any 20 ms period - 0.1 W
Tstg storage temperature -40 +150 °C
Tj junction temperature - 125 °